APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 1-6 out 0/vbus vbus gnd vdd gnd inl vdd inh these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com v ces = 1200v i c = 300a @ tc = 80c phase leg intelligent power module application ? motor control ? uninterruptible power supplies ? switched mode power supplies ? amplifier features ? trench + field stop igbt 3 technology - low voltage drop - low tail current - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? integrated fail safe igbt protection (driver ) - top bottom input signals interlock - isolated dc/dc converter ? low stray inductance ? m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? very high noise immunity (common mode rejection > 25kv/s) ? galvanic isolation: 3750v for the optocoupler 2500v for the transformer ? 5v logic level with schmitt-trigger input ? single v dd =5v supply required ? secondary auxiliary power supplies internally generated (15v, -6v) ? optocoupler qualified to aec-q100 test quidelines ? rohs compliant
APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified 1. inverter power module absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 440 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a p d maximum power dissipation t c = 25c 1400 w rbsoa reverse bias safe operating area t j = 125c 600a @ 1150v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 500 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 750 a t j = 25c 1.7 2.1 v ce(sat) collector emitter saturation voltage v dd = v in = 5v i c = 300a t j = 125c 2 v dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 21 c oes output capacitance 1.12 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.96 nf t r rise time 40 t f fall time inductive switching (25c) v dd = v in = 5v v bus = 600v ; i c = 300a 70 ns t r rise time 45 t f fall time 90 ns e on turn-on switching energy 28 e off turn-off switching energy inductive switching (125c) v dd = v in = 5v v bus = 600v i c = 300a 32 mj i sc short circuit data v dd = v in = 5v; v bus =900v t p 10s ; t j = 125c 1200 a r thjc junction to case thermal resistance 0.09 c/w
APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 3-6 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 300 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 300a t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 28 q rr reverse recovery charge t j = 125c 56 c t j = 25c 12 e rr reverse recovery energy i f = 300a v r = 600v di/dt =3500a/s t j = 125c 22 mj r thjc junction to case thermal resistance 0.16 c/w 2. driver absolute maximum ratings symbol parameter max ratings unit v dd supply voltage 5.5 v ini input signal voltage i=l, h 5.5 v v ini = 0v, i =l & h 0.35 i vddmax maximum supply current v dd =5v, v inh = /v inl ; f out = 45khz 2 a f max maximum switching frequency 45 khz driver electrical characteristics symbol characteristic test conditions min typ max unit v dd operating supply voltage 4.5 5 5.5 v v ini(max) maximum input voltage -0.5 5 5.5 v ini (th+) positive going threshold voltage 3.2 v ini(th-) negative going threshold voltage 1 v r ini input resistance * i = l, h 1 k ? t d(on) turn on delay time driver + igbt 1100 n d t built in dead time 600 t d(off) turn off delay time driver + igbt 750 ns pwd pulse width distortion 300 pdd propagation delay difference between any two driver t d(on) - t d(off) -350 350 ns v isol primary to secondary isolation 2500 v rms * low impedance guarantees good noise immunity. n including built in dead time.
APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 4-6 3. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t op operating ambient temperature -40 85 t stg storage temperature range -40 100 t c operating case temperature -40 100 c to heatsink m5 2 4.7 torque mounting torque for terminals m5 2 4 n.m wt package weight 550 g 4. lp8 package outline (dimensions in mm) ra 3,2
APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 5-6 typical igbt performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 100 200 300 400 500 600 01234 v ce (v) i c (a) v dd = 5v v in = 5v energy losses vs collector current eon eoff 0 8 16 24 32 40 48 56 64 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 600v v dd = 5v v in = 5v t j = 125c reverse bias safe operating area 0 100 200 300 400 500 600 700 0 400 800 1200 v ce (v) i c (a) t j =125c maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) hard switching 0 10 20 30 40 50 0 80 160 240 320 400 480 i c (a) fmax, operating frequency (khz) v ce =600v d=50% v dd = 5v v in = 5v t j =125c t c =75c operating frequency vs collector current limited by internal gate drive power dissipation
APTLGT300A1208G APTLGT300A1208G ? rev 0 february, 2011 www.microsemi.com 6-6 typical diode performance curve energy losses vs collector current 5 10 15 20 25 30 0 100 200 300 400 500 600 i f (a) err (mj) v r = 600v t j = 125c forward characteristic of diode t j =25c t j =125c 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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